Fluorinated Metal-Oxide Thin-Film Transistors for Circuit Implementation on a Flexible Substrate

Metal oxide semiconductor thin-film transistors for flexible electronics

Luisa Petti, Niko Münzenrieder, 2 Christian Vogt, Hendrik Faber, Lars Büthe, Giuseppe Cantarella, Francesca Bottacchi, Thomas D. Anthopoulos, and Gerhard Tröster Electronics Laboratory, Swiss Federal Institute of Technology, Zürich, Switzerland Sensor Technology Research Centre, University of Sussex, Falmer, United Kingdom Department of Physics and Centre for Plastic Electronics, Imperial Colle...

Fully transparent flexible tin-doped zinc oxide thin film transistors fabricated on plastic substrate

In this work, we have successfully fabricated bottom gate fully transparent tin-doped zinc oxide thin film transistors (TZO TFTs) fabricated on flexible plastic substrate at low temperature by RF magnetron sputtering. The effect of O2/Ar gas flow ratio during channel deposition on the electrical properties of TZO TFTs was investigated, and we found that the O2/Ar gas flow ratio have a great inf...

Thin Film Transistors & Flexible Displays

Modeling and Simulation of Flexible Oxide Thin Film Transistors

Electrical characteristic of amorphous indium gallium zinc oxide (a-IGZO) thin film transistors (TFTs) on flexible substrate are investigated with various channel width and length. Its electrical properties according to the physical dimension of the channel are analyzed through Technology Computer-Aided Design (TCAD) simulation. Index Terms — Density of states (DOS), flexible, In-GaZn-O (IGZO),...

Ultra-flexible, "invisible" thin-film transistors enabled by amorphous metal oxide/polymer channel layer blends.

Ultra-flexible and transparent metal oxide transistors are developed by doping In2 O3 films with poly(vinylphenole) (PVP). By adjusting the In2 O3 :PVP weight ratio, crystallization is frustrated, and conducting pathways for efficient charge transport are maintained. In2 O3 :5%PVP-based transistors exhibit mobilities approaching 11 cm(2) V(-1) s(-1) before, and retain up to ca. 90% performance ...